For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

9

9 - 5

HMC863LP4E

v02.0111

GaAs pHEMT MMIC ½ WATT

POWER AMPLIFIER, 22 - 26.5 GHz

Absolute Maximum Ratings

Drain Bias Voltage (Vd)

6.3V

rf input power (rfin)

+26 dBm

Channel Temperature

150 °C

Continuous pdiss (T= 85 °C)

(derate 37 mw/°C above 85 °C)

2.52 w

Thermal resistance

(channel to ground paddle)

26.9 C/w

storage Temperature

-65 to +150 °C

operating Temperature

-55 to +85 °C

esD sensitivity (HBm)

Class 0, 150V

Vdd (V)

idd (mA)

+5.0

350

+5.5

350

+6.0

350

Note: Amplifier will operate over full voltage ranges shown

above Vgg adjusted to achieve Idd = 350mA at +5.5V

Typical Supply Current vs. Vdd

eleCTrosTATiC sensiTiVe DeViCe

oBserVe HAnDlinG preCAUTions

Power Dissipation

Gain & Power vs.

Supply Voltage @ 25 GHz

Gain & Power vs.

Supply Current @ 25 GHz

18

20

22

24

26

28

30

32

300

320

340

360

380

400

Gain

P1dB

Psat

Idd (mA)

18

20

22

24

26

28

30

32

5

5.2

5.4

5.6

5.8

6

Gain

P1dB

Psat

Vdd (V)

1

1.5

2

2.5

3

3.5

4

-14

-12

-10

-8

-6

-4

-2

0

2

4

6

8

23 GHz

24 GHz

25 GHz

26 GHz

27 GHz

INPUT POWER (dBm)