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HMC902LP3E Datasheet(PDF) 1 Page - Hittite Microwave Corporation |
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HMC902LP3E Datasheet(HTML) 1 Page - Hittite Microwave Corporation |
1 / 8 page For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 7 - 1 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz v01.0310 General Description Features Functional Diagram low Noise figure: 1.8 dB High Gain: 19 dB High p1dB output power: 16 dBm single supply: +3.5 V @ 80 mA output ip3: +28 dBm 50 ohm matched input/output 16 lead 3x3mm smT package: 9mm² Electrical Specifications , T A = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 80 mA [2] Typical Applications This HmC902lp3e is ideal for: • point-to-point radios • point-to-multi-point radios • military & space • Test instrumentation The HmC902lp3e is a GaAs mmiC low Noise Amplifier housed in a leadless 3x3 mm plastic sur- face mount package. The amplifier operates between 5 and 10 GHz, providing 19 dB of small signal gain, 1.8 dB noise figure, and output ip3 of +28 dBm, while requiring only 80 mA from a +3.5V supply. The p1dB output power of +16 dBm enables the lNA to function as a lo driver for balanced, i/Q or image reject mixers. The HmC902lp3e also features i/os that are DC blocked and internally matched to 50 ohms, making it ideal for high capacity microwave radios and C-Band VsAT applications. HMC902LP3E parameter min. Typ. max. Units frequency range 5 - 10 GHz Gain [1] 17 19.5 dB Gain Variation over Temperature 0.01 dB / °C Noise figure [1] 1.8 2.2 dB input return loss 12 dB output return loss 15 dB output power for 1 dB Compression [1] 16 dBm saturated output power (psat) [1] 17.5 dBm output Third order intercept (ip3) 28 dBm supply Current (idd) (Vdd = 3.5V, set Vgg2 = 0V, Vgg1 = 0V Typ.) 80 110 mA [1] Board loss removed from gain, power and noise figure measurement. [2] Vgg1 = Vgg2 = open for normal, self-biased operation. |
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