For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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7 - 1

GaAs pHEMT MMIC LOW NOISE

AMPLIFIER, 5 - 10 GHz

v01.0310

General Description

Features

Functional Diagram

low Noise figure: 1.8 dB

High Gain: 19 dB

High p1dB output power: 16 dBm

single supply: +3.5 V @ 80 mA

output ip3: +28 dBm

50 ohm matched input/output

16 lead 3x3mm smT package: 9mm²

Electrical Specifications

[2]

Typical Applications

This HmC902lp3e is ideal for:

• point-to-point radios

• point-to-multi-point radios

• military & space

• Test instrumentation

The HmC902lp3e is a GaAs mmiC low Noise

Amplifier housed in a leadless 3x3 mm plastic sur-

face mount package. The amplifier operates between

5 and 10 GHz, providing 19 dB of small signal

gain, 1.8 dB noise figure, and output ip3 of +28 dBm,

while requiring only 80 mA from a +3.5V supply. The

p1dB output power of +16 dBm enables the lNA to

function as a lo driver for balanced, i/Q or image

reject mixers. The HmC902lp3e also features

i/os that are DC blocked and internally matched to

50 ohms, making it ideal for high capacity microwave

radios and C-Band VsAT applications.

HMC902LP3E

parameter

min.

Typ.

max.

Units

frequency range

5 - 10

GHz

17

19.5

dB

Gain Variation over Temperature

0.01

dB / °C

1.8

2.2

dB

input return loss

12

dB

output return loss

15

dB

16

dBm

17.5

dBm

output Third order intercept (ip3)

28

dBm

supply Current (idd)

(Vdd = 3.5V, set Vgg2 = 0V, Vgg1 = 0V Typ.)

80

110

mA

[1] Board loss removed from gain, power and noise figure measurement.

[2] Vgg1 = Vgg2 = open for normal, self-biased operation.