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HMC980LP4E Datasheet(PDF) 8 Page - Hittite Microwave Corporation

Part # HMC980LP4E
Description  ACTIVE BIAS CONTROLLER HIGH CURRENT
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Manufacturer  HITTITE [Hittite Microwave Corporation]
Direct Link  http://www.hittite.com
Logo HITTITE - Hittite Microwave Corporation

HMC980LP4E Datasheet(HTML) 8 Page - Hittite Microwave Corporation

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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
13 - 8
13
HMC980LP4E
ACTIVE BIAS CONTROLLER
HIGH CURRENT
v01.0911
Pin Descriptions (Continued)
Pin Number
Function
Description
Interface Schematic
11
VNEGFB
Feedback (Control) pin for Negative Voltage Generator
Charge Pump. Float to activate the negative voltage
generator / Short to GND to disable the negative voltage
generator.
12
VGATEFB
Control pin for VGATEFB. Float VGATEFB when a
depletion mode transistor is biased. Selects the mode
of operation along with VNEGFB pin.
13
VG2_CONT
Control voltage of the second gate pin VG2. Use a
resistor divider between VDD and GND to set the volt-
age. VG2 is typically 1.3V lower than the VG2CONT
14
VG2
Second gate control.
15
VNEG
Negative input to the chip. Should be supplied with
CPOUT when negative voltage generator is enabled, or
connect to external VSS when negative voltage genera-
tor is enabled. Defaults to -2.5V. If a value different than
-2.5V required, please contact factory.
16
VGATE
Gate Control pin for external amplifier. Connect to the
gate (base) of the external amplifier. In order to guar-
antee stability, a 2.2μF capacitor should be connected
between the gate (base) terminal of the external ampli-
fier and GND as close to the amplifier as possible.
17, 18
VDRAIN
Drain voltage. Should be connected to the supply termi-
nal of the external amplifier. A minimum 10 nF capacitor
has to be placed close to the external amplifier to
improve load regulation.


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