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20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

GaAs HEMT MMIC MEDIUM POWER

AMPLIFIER, 81 - 86 GHz

v00.0110

General Description

Features

Functional Diagram

high Gain: 12 dB

high P1dB: +19 dBm

Bias supply: +4V

50 ohm matched input/output

Die size: 2.57 x 1.70 x 0.05 mm

Electrical Specifications

[2]

Typical Applications

This hmC-aPh634 is ideal for:

• short haul / high Capacity Links

• wireless Lan Bridges

• military & space

• e-Band Communication systems

The hmC-aPh634 is a two stage Gaas hemT mmiC

medium Power amplifier which operates between

81 and 86 Ghz. The hmC-aPh634 provides 12

dB of gain, and an output power of up to +20 dBm

at 1 dB compression from a +4V supply. all bond

pads and the die backside are Ti/au metallized

and the amplifier device is fully passivated for reliable

operation. The hmC-aPh634 Gaas hemT mmiC

medium Power amplifier is compatible with conven-

tional die attach methods, as well as thermocomp-

ression and thermosonic wire bonding, making it

ideal for mCm and hybrid microcircuit applications.

all data shown herein is measured with the chip in

a 50 ohm environment and contacted with rf probes.

HMC-APH634

Parameter

min.

Typ.

max.

Units

frequency range

81 - 86

Ghz

Gain

7

12

dB

input return Loss

7

dB

output return Loss

8

dB

output power for 1dB Compression (P1dB)

19

dBm

supply Current (idd1+idd2)

240

ma

[1] Unless otherwise indicated, all measurements are from probed die.