4

4 - 90

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

GaAs MMIC FUNDAMENTAL

MIXER, 54 - 64 GHz

v01.0209

General Description

Features

Functional Diagram

Passive Double Balanced Topology

High LO to RF Isolation: 30 dB

Low Conversion Loss: 8 dB

Wide IF Bandwidth: DC - 5 GHz

Die Size: 0.9 x 1.0 x 0.1 mm

Typical Applications

This HMC-MDB169 is ideal for:

• Short Haul / High Capacity Radios

• Point-to-Multi-Point Equipment

• Military Radar, ECM & EW

• SATCOM

The HMC-MDB169 is a passive Double Balanced

MMIC Mixer which utilizes GaAs Heterojunction Bipolar

Transistor (HBT) Shottky diode technology and can

be used as either an upconverter or a downconverter.

This compact mixer features wide IF bandwidth,

low conversion loss and high LO to RF and LO to IF

isolation. All bond pads and the die backside are Ti/Au

metallized and the Shottky devices are fully passivated

for reliable operation.

The HMC-MDB169 Double

Balanced Mixer is compatible with conventional die

attach methods, as well as thermocompression and

thermosonic wire bonding, making it ideal for MCM and

hybrid microcircuit applications. This compact MMIC

is a much smaller and more consistent alternative to

hybrid style double balanced mixer assemblies. All

data shown herein is measured with the chip in a 50

Ohm environment and contacted with RF probes.

HMC-MDB169

Parameter

Min.

Typ.

Max.

Units

Frequency Range, RF & LO

54 - 64

GHz

Frequency Range, IF

DC - 5

GHz

Conversion Loss

811

dB

LO to RF Isolation

30

dB

LO to IF Isolation

25

dB

RF to IF Isolation

25

dB

IP3 (Input)

13

dBm

1 dB Compression (Input)

4

dBm

[1] Unless otherwise indicated, all measurements are from probed die