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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

GaAs HEMT LOW NOISE

AMPLIFIER, 57 - 65 GHz

v03.1210

General Description

Features

Functional Diagram

noise figure: 3.8 dB

p1dB: +12 dBm

Gain: 21 dB

supply Voltage: +2.5V

50 ohm matched input/output

Die size: 1.55 x 0.73 x 0.1 mm

Electrical Specifications, T

Typical Applications

This hmC-Alh382 is ideal for:

• Short Haul / High Capacity Links

• Wireless LANs

• Military & Space

The hmC-Alh382 is a high dynamic range, four

stage GaAs hemT mmiC low noise Amplifier

(lnA) which operates between 57 and 65 Ghz. The

hmC-Alh382 features 21 dB of small signal gain,

4 dB of noise figure and an output power of +12

dBm at 1dB compression from a +2.5V supply

voltage. All bond pads and the die backside are Ti/

Au metallized and the amplifier device is fully

passivated for reliable operation. This versatile lnA

is compatible with conventional die attach methods,

as well as thermocompression and thermosonic

wirebonding, making it ideal for MCM and hybrid

microcircuit applications. All data shown herein is

measured with the chip in a 50 ohm environment and

contacted with rf probes.

HMC-ALH382

parameter

min.

Typ.

max.

Units

frequency range

57 - 65

Ghz

Gain

19

21

dB

noise figure

4

5.5

dB

input return loss

12

dB

output return loss

10

dB

output power for 1 dB Compression (p1dB)

12

dBm

supply Current (idd)(Vdd= 2.5V,Vgg= -0.3V Typ.)

64

100

mA

*Unless otherwise indicated, all measurements are from probed die