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IGW25N120H3 Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # IGW25N120H3
Description  High speed IGBT in Trench and Fieldstop technology
Download  16 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IGW25N120H3 Datasheet(HTML) 4 Page - Infineon Technologies AG

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4
IGW25N120H3
High speed switching series third generation
Rev. 1.1, 2011-01-25
Maximum ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
V†Š
1200
V
DC collector current, limited by
TÝÎÑÈà
T† = 25°C
T† = 100°C
I
50.0
25.0
A
Pulsed collector current,
tÔ limited by TÝÎÑÈà
I†ÔÛÐÙ
100.0
A
Turn off safe operating area
V†Š ù 1200V, TÝÎ ù 175°C
-
100.0
A
Gate-emitter voltage
V•Š
±20
V
Short circuit withstand time
V•Š = 15.0V, V†† ù 600V
Allowed number of short circuits < 1000
Time between short circuits: ú 1.0s
TÝÎ = 175°C
tȠ
10
µs
Power dissipation
T† = 25°C
Power dissipation
T† = 100°C
PÚÓÚ
326.0
156.0
W
Operating junction temperature
TÝÎ
-40...+175
°C
Storage temperature
TÙÚÃ
-55...+150
°C
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
Thermal Resistance
Parameter
Symbol Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction - case
RÚÌñÎ-Êò
0.46
K/W
Thermal resistance
junction - ambient
RÚÌñÎ-Èò
40
K/W
Electrical Characteristic, at
Electrical Characteristic, at
Electrical Characteristic, at
Electrical Characteristic, at
T
T
T
TÝÎ = 25°C, unless otherwise specified
ÝÎ = 25°C, unless otherwise specified
ÝÎ = 25°C, unless otherwise specified
ÝÎ = 25°C, unless otherwise specified
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
Static Characteristic
Collector-emitter breakdown voltage
Vñ…çò†Š» V•Š = 0V, I† = 0.50mA
1200
-
-
V
Collector-emitter saturation voltage
V†ŠÙÈÚ
V•Š = 15.0V, I† = 25.0A
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 175°C
-
-
-
2.05
2.50
2.70
2.40
-
-
V
Gate-emitter threshold voltage
V•ŠñÚÌò
I† = 0.85mA, V†Š = V•Š
5.0
5.8
6.5
V
Zero gate voltage collector current
I†Š»
V†Š = 1200V, V•Š = 0V
TÝÎ = 25°C
TÝÎ = 175°C
-
-
-
-
250.0
2500.0
µA
Gate-emitter leakage current
I•Š»
V†Š = 0V, V•Š = 20V
-
-
600
nA
Transconductance
gËÙ
V†Š = 20V, I† = 25.0A
-
13.0
-
S


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