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DRV8804 Datasheet(PDF) 5 Page - Texas Instruments |
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DRV8804 Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 15 page  DRV8804 www.ti.com SLVSAW4B – JULY 2011 – REVISED NOVEMBER 2011 RECOMMENDED OPERATING CONDITIONS MIN NOM MAX UNIT VM Power supply voltage range 8.2 60 V VCLAMP Output clamp voltage range 8.2 60 V Continuous output current, single channel on, TA = 25°C, SOIC package (1) 1.5 Continuous output current, four channels on, TA = 25°C, SOIC package (1) 0.8 IOUT A Continuous output current, single channel on, TA = 25°C, HTSSOP package (1) 1.5 Continuous output current, four channels on, TA = 25°C, HTSSOP package (1) 0.8 (1) Power dissipation and thermal limits must be observed. ELECTRICAL CHARACTERISTICS TA = 25°C, over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLIES IVM VM operating supply current VM = 24 V 1.6 2.1 mA VM undervoltage lockout VUVLO VM rising 8.2 V voltage LOGIC-LEVEL INPUTS (SCHMITT TRIGGER INPUTS WITH HYSTERESIS) VIL Input low voltage 0.6 0.7 V VIH Input high voltage 2 V VHYS Input hysteresis 0.45 V IIL Input low current VIN = 0 –20 20 μA IIH Input high current VIN = 3.3 V 100 μA RPD Pulldown resistance 100 k Ω nFAULT OUTPUT (OPEN-DRAIN OUTPUT) VOL Output low voltage IO = 5 mA 0.5 V IOH Output high leakage current VO = 3.3 V 1 μA SDATAOUT OUTPUT (OPEN-DRAIN OUTPUT WITH INTERNAL PULLUP) VOL Output low voltage IO = 5 mA 0.5 V VOH Output high voltage IO = 100 µA, VM = 24 V 2.5 4.5 5.5 V IOH Output high leakage current VO = 3.3 V 1 µA LOW-SIDE FETS VM = 24 V, IO = 700 mA, TJ = 25°C 0.5 RDS(ON) FET on resistance Ω VM = 24 V, IO = 700 mA, TJ = 85°C 0.75 0.8 IOFF Off-state leakage current –50 50 μA HIGH-SIDE DIODES VF Diode forward voltage VM = 24 V, IO = 700 mA, TJ = 25°C 1.2 V IOFF Off-state leakage current VM = 24 V, TJ = 25°C –50 50 μA OUTPUTS tR Rise time VM = 24 V, IO = 700 mA, Resistive load 50 300 ns tF Fall time VM = 24 V, IO = 700 mA, Resistive load 50 300 ns PROTECTION CIRCUITS IOCP Overcurrent protection trip level 2.3 3.8 A Overcurrent protection deglitch tOCP 3.5 µs time Overcurrent protection retry tRETRY 1.2 ms time tTSD Thermal shutdown temperature Die temperature(1) 150 160 180 °C (1) Not production tested. Copyright © 2011, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): DRV8804 |
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