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8ETH06PBF Datasheet(PDF) 4 Page - Vishay Siliconix |
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8ETH06PBF Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94026 4 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETH06PbF, VS-8ETH06FPPbF Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) Fig. 8 - Forward Power Loss Characteristics Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt Fig. 10 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR 02 6 10 12 IF(AV) - Average Forward Current (A) 120 140 48 150 160 170 180 130 Square wave (D = 0.50) Rated V R applied See note (1) DC 02 6 10 14 IF(AV) - Average Forward Current (A) 80 100 48 120 140 160 180 Square wave (D = 0.50) Rated V R applied See note (1) DC 12 02 6 10 12 IF(AV) - Average Forward Current (A) 0 4 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC RMS limit 48 8 12 16 20 18 14 10 6 2 100 1000 dIF/dt (A/µs) 60 10 I F = 16 A I F = 8 A V R = 390 V T J = 125 °C T J = 25 °C 50 40 30 20 100 1000 dIF/dt (A/µs) 400 0 I F = 16 A I F = 8 A 300 200 100 50 V R = 390 V T J = 125 °C T J = 25 °C 350 250 150 |
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