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10ETS12STRLPBF Datasheet(PDF) 2 Page - Vishay Siliconix |
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10ETS12STRLPBF Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com For technical questions, contact: diodestech@vishay.com Document Number: 94338 2 Revision: 08-Apr-10 VS-10ETS..SPbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 10 A Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop VFM 10 A, TJ = 25 °C 1.1 V Forward slope resistance rt TJ = 150 °C 20 m Ω Threshold voltage VF(TO) 0.82 V Maximum reverse leakage current IRM TJ = 25 °C VR = Rated VRRM 0.05 mA TJ = 150 °C 0.50 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range TJ, TStg - 40 to 150 °C Maximum thermal resistance, junction to case RthJC DC operation 2.5 °C/W Maximum thermal resistance, junction to ambient (PCB mount) RthJA (1) 62 Soldering temperature TS 240 °C Approximate weight 2g 0.07 oz. Marking device Case style D2PAK (SMD-220) 10ETS08S 10ETS10S 10ETS12S |
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