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10TTS08STRLPBF Datasheet(PDF) 2 Page - Vishay Siliconix |
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10TTS08STRLPBF Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94562 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 08-Jun-10 VS-10TTS08SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 10 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current IT(AV) TC = 112 °C, 180° conduction half sine wave 6.5 A Maximum RMS on-state current IT(RMS) 10 Maximum peak, one-cycle, non-repetitive surge current ITSM 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 120 10 ms sine pulse, no voltage reapplied, TJ = 125 °C 140 Maximum I2t for fusing I2t 10 ms sine pulse, rated VRRM applied, TJ = 125 °C 72 A2s 10 ms sine pulse, no voltage reapplied, TJ = 125 °C 100 Maximum I2 √t for fusing I2 √t t = 0.1 ms to 10 ms, no voltage reapplied, TJ = 125 °C 1000 A2 √s Maximum on-state voltage drop VTM 6.5 A, TJ = 25 °C 1.15 V On-state slope resistance rt TJ = 125 °C 17.3 m Ω Threshold voltage VT(TO) 0.85 V Maximum reverse and direct leakage current IRM/IDM TJ = 25 °C VR = Rated VRRM/VDRM 0.05 mA TJ = 125 °C 1.0 Typical holding current IH Anode supply = 6 V, resistive load, initial IT = 1 A 30 Maximum latching current IL Anode supply = 6 V, resistive load 50 Maximum rate of rise of off-state voltage dV/dt TJ = 25 °C 150 V/μs Maximum rate of rise of turned-on current dI/dt 100 A/μs TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power PGM 8.0 W Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current +IGM 1.5 A Maximum peak negative gate voltage -VGM 10 V Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = - 65 °C 20 mA Anode supply = 6 V, resistive load, TJ = 25 °C 15 Anode supply = 6 V, resistive load, TJ = 125 °C 10 Maximum required DC gate voltage to trigger VGT Anode supply = 6 V, resistive load, TJ = - 65 °C 1.2 V Anode supply = 6 V, resistive load, TJ = 25 °C 1 Anode supply = 6 V, resistive load, TJ = 125 °C 0.7 Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.2 Maximum DC gate current not to trigger IGD 0.1 mA SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time tgt TJ = 25 °C 0.8 μs Typical reverse recovery time trr TJ = 125 °C 3 Typical turn-off time tq 100 |
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