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16TTS08SPBF Datasheet(PDF) 2 Page - Vishay Siliconix |
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16TTS08SPBF Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94589 2 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 08-Jun-10 VS-16TTS..SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 16 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS TYP. MAX. Maximum average on-state current IT(AV) TC = 98 °C, 180° conduction, half sine wave 10 A Maximum RMS on-state current IRMS 16 Maximum peak, one-cycle, non-repetitive surge current ITSM 10 ms sine pulse, rated VRRM applied 170 10 ms sine pulse, no voltage reapplied 200 Maximum I2t for fusing I2t 10 ms sine pulse, rated VRRM applied 144 A2s 10 ms sine pulse, no voltage reapplied 200 Maximum I2 √t for fusing I2 √t t = 0.1 ms to 10 ms, no voltage reapplied 2000 A2 √s Maximum on-state voltage drop VTM 10 A, TJ = 25 °C 1.4 V On-state slope resistance rt TJ = 125 °C 24.0 m Ω Threshold voltage VT(TO) 1.1 V Maximum reverse and direct leakage current IRM/IDM TJ = 25 °C VR = Rated VRRM/VDRM 0.5 mA TJ = 125 °C 10 Holding current IH Anode supply = 6 V, resistive load, initial IT = 1 A - 100 Maximum latching current IL Anode supply = 6 V, resistive load 200 Maximum rate of rise of off-state voltage dV/dt 500 V/μs Maximum rate of rise of turned-on current dI/dt 150 A/μs TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power PGM 8.0 W Maximum average gate power PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = - 10 °C 90 mA Anode supply = 6 V, resistive load, TJ = 25 °C 60 Anode supply = 6 V, resistive load, TJ = 125 °C 35 Maximum required DC gate voltage to trigger VGT Anode supply = 6 V, resistive load, TJ = - 10 °C 3.0 V Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.25 Maximum DC gate current not to trigger IGD 2.0 mA SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time tgt TJ = 25 °C 0.9 μs Typical reverse recovery time trr TJ = 125 °C 4 Typical turn-off time tq 110 |
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