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20CTH03FPPBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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20CTH03FPPBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 94010 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 28-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Hyperfast Rectifier, 2 x 10 A FRED Pt® VS-20CTH03PbF, VS-20CTH03FPPbF Vishay Semiconductors FEATURES • Hyperfast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current • Fully isolated package (VINS = 2500 VRMS) • UL E78996 pending • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 qualified (TO-220) • Designed and qualified for industrial level (TO-220FP) DESCRIPTION/APPLICATIONS 300 V series are the state of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY Package TO-220AB, TO-220FP IF(AV) 2 x 10 A VR 300 V VF at IF 1.25 V trr typ. See Recovery table TJ max. 175 °C Diode variation Common cathode TO-220AB TO-220 FULL-PAK VS-20CTH03PbF VS-20CTH03FPPbF Anode 1 3 2 Base common cathode 2 Common cathode Anode Anode 1 3 2 Common cathode Anode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage VRRM 300 V Average rectified forward current per diode IF(AV) TC = 160 °C 10 A (FULL-PAK) per diode TC = 135 °C per device 20 Non-repetitive peak surge current IFSM TJ = 25 °C 120 Operating junction and storage temperatures TJ, TStg - 65 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage VBR, VR IR = 100 μA 300 - - V Forward voltage VF IF = 10 A - 1.05 1.25 IF = 10 A, TJ = 125 °C - 0.85 0.95 Reverse leakage current IR VR = VR rated - - 20 μA TJ = 125 °C, VR = VR rated - 6 200 Junction capacitance CT VR = 300 V - 30 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH |
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