20CTH03FPPBF datasheet(1/9 Pages) VISHAY

Part #	20CTH03FPPBF

Description	Hyperfast Rectifier, 2 x 10 A FRED Pt

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 94010

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 28-Apr-11

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Hyperfast Rectifier, 2 x 10 A FRED Pt®

VS-20CTH03PbF, VS-20CTH03FPPbF

Vishay Semiconductors

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Fully isolated package (VINS = 2500 VRMS)

• UL E78996 pending

• Compliant to RoHS Directive 2002/95/EC

• AEC-Q101 qualified (TO-220)

• Designed and qualified for industrial level (TO-220FP)

DESCRIPTION/APPLICATIONS

300 V series are the state of the art hyperfast recovery

rectifiers designed with optimized performance of forward

voltage drop and hyperfast recovery time.

The planar structure and the platinum doped life time

control,

guarantee

the

best

overall

performance,

ruggedness and reliability characteristics.

These devices are intended for use in the output rectification

stage of SMPS, UPS, DC/DC converters as well as

freewheeling diodes in low voltage inverters and chopper

motor drives.

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

PRODUCT SUMMARY

Package

TO-220AB, TO-220FP

IF(AV)

2 x 10 A

VR

300 V

VF at IF

1.25 V

trr typ.

See Recovery table

TJ max.

175 °C

Diode variation

Common cathode

TO-220AB

TO-220 FULL-PAK

VS-20CTH03PbF

VS-20CTH03FPPbF

Anode

1

3

2

Base

common

cathode

2

Common

cathode

Anode

1

3

2

Common

cathode

Anode

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

VRRM

300

V

Average rectified forward current

per diode

IF(AV)

TC = 160 °C

10

A

(FULL-PAK) per diode

TC = 135 °C

per device

20

Non-repetitive peak surge current

IFSM

TJ = 25 °C

120

Operating junction and storage temperatures

TJ, TStg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

VBR,

VR

IR = 100 μA

300

-

V

Forward voltage

VF

IF = 10 A

-

1.05

1.25

IF = 10 A, TJ = 125 °C

-

0.85

0.95

Reverse leakage current

IR

VR = VR rated

-

20

μA

TJ = 125 °C, VR = VR rated

-

6

200

Junction capacitance

CT

VR = 300 V

-

30

-

pF

Series inductance

LS

Measured lead to lead 5 mm from package body

-

8

-

nH

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