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Document Number: 94591

2

Revision: 04-Mar-10

VS-20MQ100NPbF

Note

Note

(1)

thermal runaway condition for a diode on its own heatsink

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

See fig. 1

2 A

0.91

V

1.5 A

0.85

1 A

0.78

2 A

0.72

1.5 A

0.68

1 A

0.63

Maximum reverse leakage current

See fig. 2

0.1

mA

1

Threshold voltage

0.52

V

Forward slope resistance

78.4

m

Ω

Typical junction capacitance

38

pF

Typical series inductance

Measured lead to lead 5 mm from package body

2.0

nH

Maximum voltage rate of change

dV/dt

10 000

V/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and

storage temperature range

- 55 to 150

°C

Maximum thermal resistance,

junction to ambient

DC operation

80

°C/W

Approximate weight

0.07

g

0.002

oz.

Marking device

Case style SMA (similar D-64)

V2J

dP

tot

dT

J

-------------

1

R

thJA

--------------

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