Document Number: 94573

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Revision: 04-Jan-11

1

High Performance Schottky Generation 5.0, 20 A

VS-20UT04, VS-20WT04FN

Vishay Semiconductors

Note

FEATURES

• 175 °C high performance Schottky diode

• Very low forward voltage drop

• Extremely low reverse leakage

• Increased ruggedness for reverse avalanche capability

• RBSOA available

• Negligible switching losses

• Submicron trench technology

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Specific for PV cells bypass diode

• High efficiency SMPS

• High frequency switching

• Output rectification

• Reverse battery protection

• Freewheeling

• DC/DC systems

• Increased power density systems

PRODUCT SUMMARY

Package

D-PAK (TO-252AA),

I-PAK (TO-251AA)

20 A

45 V

0.53 V

7 mA at 125 °C

175 °C

Diode variation

Single die

108 mJ

I-PAK (TO-251AA)

D-PAK (TO-252AA)

VS-20UT04

VS-20WT04FN

Base

cathode

Anode

Anode

4, 2

3

1

Base

cathode

Anode

Anode

4, 2

3

1

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

45

V

(typical, measured connecting 2 anode pins)

0.480

V

Range

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VS-20UT04

VS-20WT04FN

UNITS

Maximum DC reverse voltage

45

V