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Document Number: 94539

4

Revision: 01-Mar-09

25MT060WFAPbF

(Warp Speed IGBT), 50 A

Fig. 4 - Maximum Transient Thermal Impedance, Junction to Case (Diode)

Fig. 5 - Typical Capacitance vs. Collector to Emitter Voltage

Fig. 6 - Typical Gate Charge vs. Gate to Emitter Voltage

Fig. 7 - Typical Switching Losses vs. Gate Resistance

Fig. 8 - Typical Switching Losses vs. Junction Temperature

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

0.001

0.01

0.1

1

10

0.20

0.10

D = 0.50

0.01

0.02

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.10

0.01

0.02

0.05

1

10

100

1000

VCE (V)

0

1000

2000

3000

4000

5000

6000

7000

Cies

Coes

Cres

VGE = 0V, f = 1 MHZ

C

ies

= C

ge

+C

gc

, C

ce

SHORTED

C

res

= C

gc

C

oes

= C

ce

+ C

gc

0

50

100

150

200

QG, Total Gate Charge (nC)

0.0

4.0

8.0

12.0

16.0

IC= 25A

VCE = 480V

0

10

20

30

40

50

60

RG, Gate Resistance ( Ω)

0.0

0.5

1.0

1.5

VCC = 480V

VGE = 15V

TJ = 25°C

I C = 25A

EOFF

EON

20

40

60

80

100

120

140

160

TJ, Junction Temperature (°C)

0.1

1

10

RG = 5.0Ω

VGE = 15V

VCC = 480V

IC = 50A

IC = 25A

IC = 12.5A