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2N6666 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2N6666
Description  isc Silicon PNP Darlington Power Transistor
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6666 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
2N6666
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= -0.2A, IB= 0
B
-40
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -3A ,IB= -6mA
-2.0
V
VCE(sat)-2
Collector-Emitter Saturation voltage
IC= -8A ,IB= -80mA
-3.0
V
VBE(on)-1
Base-Emitter On Voltage
IC= -3.0A ; VCE= -3V
-2.8
V
VBE(on)-2
Base-Emitter On Voltage
IC= -8.0A ; VCE= -3V
-4.5
V
ICEX
Collector Cutoff Current
VCEV= 40V;VBE(off)=1.5V
VCEV= 40V;VBE(off)=1.5V;TC=125℃
0.3
3.0
mA
ICEO
Collector Cutoff Current
VCE= -40V, IB= 0
1
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
5
mA
hFE-1
DC Current Gain
IC= -3.0A ; VCE= -3V
1000
hFE-2
DC Current Gain
IC= -8.0A ; VCE= -3V
100
COB
Output Capacitance
IE= 0; VCB= -10V,ftest= 1MHz
200
pF
isc Website：www.iscsemi.cn


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