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2N6666 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6666 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2N6666 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -0.2A, IB= 0 B -40 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A ,IB= -6mA -2.0 V VCE(sat)-2 Collector-Emitter Saturation voltage IC= -8A ,IB= -80mA -3.0 V VBE(on)-1 Base-Emitter On Voltage IC= -3.0A ; VCE= -3V -2.8 V VBE(on)-2 Base-Emitter On Voltage IC= -8.0A ; VCE= -3V -4.5 V ICEX Collector Cutoff Current VCEV= 40V;VBE(off)=1.5V VCEV= 40V;VBE(off)=1.5V;TC=125℃ 0.3 3.0 mA ICEO Collector Cutoff Current VCE= -40V, IB= 0 1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 5 mA hFE-1 DC Current Gain IC= -3.0A ; VCE= -3V 1000 hFE-2 DC Current Gain IC= -8.0A ; VCE= -3V 100 COB Output Capacitance IE= 0; VCB= -10V,ftest= 1MHz 200 pF isc Website:www.iscsemi.cn |
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