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2N6674 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6674 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn 2 isc Silicon NPN Power Transistors 2N6674/6675 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT 2N6674 300 V(BR)CEO Collector-Emitter Breakdown Voltage 2N6675 IC= 200mA ; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 5A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2A 1.5 V 2N6674 VCE= 450V; VBE= -1.5V 0.1 ICEX Collector Cutoff Current 2N6675 VCE= 650V; VBE= -1.5V 0.1 mA 2N6674 VCB= 450V; IE= 0 1.0 ICBO Collector Cutoff Current 2N6675 VCB= 650V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 1A ; VCE= 3V 15 40 hFE-2 DC Current Gain IC= 10A ; VCE= 2V 8 20 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 500 pF |
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