50MT060ULSTAPbF

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Vishay Semiconductors

Revision: 17-Jun-11

5

Document Number: 94540

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 7 - Maximum Transient Thermal Impedance, Junction to Case (Diode)

Fig. 8 - Typical Capacitance vs. Collector to Emitter Voltage

Fig. 9 - Typical Gate Charge vs. Gate to Emitter Voltage

Fig. 10 - Typical Switching Losses vs. Gate Resistance

Fig. 11 - Typical Switching Losses vs. Junction Temperature

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W)

τi (sec)

0.200

0.000993

0.296

0.038934

0.102

0.52648

?

J

τ

J

?

1

τ

1

?

2

τ

2

?

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

?

τ

C

Ci

i

?Ri

Ci=

τi/Ri

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

0

2000

4000

6000

8000

10000

12000

14000

Coes

Cres

Cies

VGE = 0V, f = 1 MHZ

C

ies

= C

ge

+C

gc

, C

ce

SHORTED

C

res

= C

gc

C

oes

= C

ce

+ C

gc

0

100

200

300

400

QG, Total Gate Charge (nC)

0.0

4.0

8.0

12.0

16.0

20.0

IC= 100A

VCE = 480V

0

10

20

30

Rg , Gate Resistance ( Ω)

0.0

1.0

2.0

3.0

4.0

5.0

VCC = 480V

VGE = 15V

TJ = 25°C

I C = 100A

EOFF

EON

-60 -40 -20

0

20

40

60

80 100 120 140 160

TJ, Junction Temperature (°C)

0.1

1

10

100

RG = 5.0Ω

VGE = 15V

VCC = 480V

IC = 100A

IC = 50A

IC = 25A