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50MT060ULSTAPBF Datasheet(PDF) 5 Page - Vishay Siliconix |
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50MT060ULSTAPBF Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 10 page 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors Revision: 17-Jun-11 5 Document Number: 94540 For technical questions, contact: indmodules@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 7 - Maximum Transient Thermal Impedance, Junction to Case (Diode) Fig. 8 - Typical Capacitance vs. Collector to Emitter Voltage Fig. 9 - Typical Gate Charge vs. Gate to Emitter Voltage Fig. 10 - Typical Switching Losses vs. Gate Resistance Fig. 11 - Typical Switching Losses vs. Junction Temperature 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) 0.0001 0.001 0.01 0.1 1 0.20 0.10 D = 0.50 0.02 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Ri (°C/W) τi (sec) 0.200 0.000993 0.296 0.038934 0.102 0.52648 ? J τ J ? 1 τ 1 ? 2 τ 2 ? 3 τ 3 R 1 R 1 R 2 R 2 R 3 R 3 ? τ C Ci i ?Ri Ci= τi/Ri 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0 2000 4000 6000 8000 10000 12000 14000 Coes Cres Cies VGE = 0V, f = 1 MHZ C ies = C ge +C gc , C ce SHORTED C res = C gc C oes = C ce + C gc 0 100 200 300 400 QG, Total Gate Charge (nC) 0.0 4.0 8.0 12.0 16.0 20.0 IC= 100A VCE = 480V 0 10 20 30 Rg , Gate Resistance ( Ω) 0.0 1.0 2.0 3.0 4.0 5.0 VCC = 480V VGE = 15V TJ = 25°C I C = 100A EOFF EON -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 0.1 1 10 100 RG = 5.0Ω VGE = 15V VCC = 480V IC = 100A IC = 50A IC = 25A |
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