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2SB548 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB548 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB548 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-50μA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA -2.0 V VBEsat Base-emitter saturation voltage IC=-0.5A ;IB=-50mA -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 μA hFE DC current gain IC=-0.2A ; VCE=-5V 40 320 COB Output capacitance IE=0; VCB=-10V;f=1MHz 25 pF fT Transition frequency IC=-0.1A ; VCE=-5V 70 MHz |
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