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60EPU06PBF Datasheet(PDF) 1 Page - Vishay Siliconix |
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60EPU06PBF Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 94023 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 14-Feb-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Ultrafast Soft Recovery Diode, 60 A FRED Pt® VS-60EPU06PbF, VS-60APU06PbF Vishay Semiconductors FEATURES • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level BENEFITS • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. PRODUCT SUMMARY Package TO-247AC, TO-247AC modified (2 pins) IF(AV) 60 A VR 600 V VF at IF 1.68 V trr typ. See Recovery table TJ max. 175 °C Diode variation Single die TO-247AC modified TO-247AC Cathode to base 2 1 3 Cathode Anode VS-60EPU06PbF Cathode to base 2 Anode Anode VS-60APU06PbF 1 3 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage VR 600 V Continuous forward current IF(AV) TC = 116 °C 60 A Single pulse forward current IFSM TC = 25 °C 600 Maximum repetitive forward current IFRM Square wave, 20 kHz 120 Operating junction and storage temperatures TJ, TStg - 55 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage VBR, VR IR = 100 μA 600 - - V Forward voltage VF IF = 60 A - 1.35 1.68 IF = 60 A, TJ = 125 °C - 1.20 1.42 IF = 60 A, TJ = 175 °C - 1.11 1.30 Reverse leakage current IR VR = VR rated - - 50 μA TJ = 150 °C, VR = VR rated - - 500 Junction capacitance CT VR = 600 V - 39 - pF |
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