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2SB816 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB816 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 4 page Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB816 DESCRIPTION ・ With TO-3PN package ・ Complement to type 2SD1046 ・ Wide area of safe operation APPLICATIONS ・ For LF Power Amplifier, 50W Output Large Power Switching Applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -8 A ICP Collector current-peak -12 A PC Collector power dissipation TC=25℃ 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -40~150 ℃ Fig.1 simplified outline (TO-3PN) and symbol |
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