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SWI1N60 Datasheet(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SWI1N60 Datasheet(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
1 / 7 page Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Features ■ High ruggedness ■ R DS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. N-channel MOSFET Absolute maximum ratings Symbol Parameter Value Unit TO-126 TO-251 TO-252 V DSS Drain to Source Voltage 600 V I D Continuous Drain Current (@T C=25 oC) 1.0 1.0 A Continuous Drain Current (@T C=100 oC) 0.65 0.65 A I DM Drain current pulsed (note 1) 4.0 4.0 A V GS Gate to Source Voltage ± 30 V E AS Single pulsed Avalanche Energy (note 2) 52 mJ E AR Repetitive Avalanche Energy (note 1) 0.3 mJ dv/dt Peak diode Recovery dv/dt (note 3) 4.5 V/ns P D Total power dissipation (@T C=25 oC) 30 30 W Derating Factor above 25oC 0.23 0.23 W/oC T STG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Maximum Value Unit TO-126 TO-251 TO-252 R thjC Thermal resistance, Junction to case 4.2 oC/W R thCS Thermal resistance, Junction to case 50 oC/W R thjA Thermal resistance, Junction to ambient 110 oC/W Mar. 2011. Rev. 2.0 1/7 BV DSS : 600V I D : 1.0A R DS(ON) : 12ohm 1 2 3 1 2 3 1. Gate 2. Drain 3. Source TO-251 1 2 3 TO-252 TO-126 1 2 3 SW1N60 SAMWIN Item Sales Type Marking Package Packaging 1 SW L 1N60 SW1N60 TO-126 TUBE 2 SW I 1N60 SW1N60 TO-251 TUBE 3 SW D 1N60 SW1N60 TO-252 REEL Order Codes |
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