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SW1N60C Datasheet(PDF) 3 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW1N60C Datasheet(HTML) 3 Page - Xian Semipower Electronic Technology Co., Ltd. |
3 / 7 page Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Fig. 1. On-state characteristics Fig. 2. Transfer characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 5. Capacitance characteristics (Non-Repetitive) Fig. 6. Gate charge characteristics Fig. 4. On state current vs. diode forward voltage 3/7 10 -1 10 0 10 1 10 -2 10 -1 10 0 ※ Notes : 1. 250μs Pulse Test 2. T C = 25℃ V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V V DS , Drain-Source Voltage [V] 2 4 6 8 10 10 -1 10 0 150 o C 25 o C -55 o C ※ Notes : 1. V DS = 50V 2. 250μs Pulse Test V GS , Gate-Source Voltage [V] 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 V GS = 20V V GS = 10V ،ط Note : T J = 25،ة I D , Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 150،ة ،ط Notes : 1. V GS = 0V 2. 250¥ىs Pulse Test 25،ة V SD , Source-Drain voltage [V] SW1N60C SAMWIN |
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