SWI1N60C datasheet(4/7 Pages) SEMIPOWER

Part #	SWI1N60C

Description	N-channel D-PAK/I-PAK/TO-92 MOSFET

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Manufacturer	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Direct Link	http://www.samwinsemi.com

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4 / 7 page

Fig. 9. Maximum drain current vs.

case temperature.

Fig. 8. On resistance variation

vs. junction temperature

Fig. 10. Maximum safe operating area

Fig. 11. Transient thermal response curve

25

50

75

100

125

150

0.00

0.25

0.50

0.75

1.00

T

C'

Case Temperature [

oC]

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

،ط Notes :

1. V

GS

= 10 V

2. I

D

= 0.5 A

T

J

, Junction Temperature [

oC]

10

0

10

1

10

2

10

3

10

-2

10

-1

10

0

10

1

DC

10 ms

1 ms

100 s

Operation in This Area

is Limited by R

DS(on)

،ط Notes :

1. T

C

= 25

oC

2. T

J

= 150

oC

3. Single Pulse

V

DS

, Drain-Source Voltage [V]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

،ط Notes :

1. V

GS

= 0 V

2. I

D

= 250 ¥ىA

T

J

, Junction Temperature [

oC]

Fig 7. Breakdown Voltage Variation

vs. Junction Temperature

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

10

1

،ط Notes :

1. Z

¥èJC

(t) = 4.2 ،ة/W Max.

2. Duty Factor, D=t

1

/t

2

3. T

JM

- T

C

= P

DM

* Z

¥èJC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

t

1

, Square Wave Pulse Duration [sec]

SW1N60C

SAMWIN

4/7

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SWI1N60C Datasheet(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

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