SWP12N65 datasheet(3/7 Pages) SEMIPOWER

Part #	SWP12N65

Description	N-channel MOSFET

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Manufacturer	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Direct Link	http://www.samwinsemi.com

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Fig. 1. On-state characteristics

Fig. 2. Transfer characteristics

Fig. 3. On-resistance variation vs.

drain current and gate voltage

Fig. 5. Capacitance characteristics

(Non-Repetitive)

Fig. 6. Gate charge characteristics

Fig. 4. On state current vs.

diode forward voltage

10

0

10

1

10

0

10

1

V

GS

Top :

15.0 V

10.0V

8.0V

7.0V

6.0V

5.5V

5.0V

Bottom: 4.5 V

Notes :

※

1. 250µs Pulse Test

2. T

C = 25℃

V

DS, Drain-Source Voltage [V]

24

68

10

-1

10

0

10

1

150

oC

25

oC

-55

oC

Notes :

※

1. V

DS = 40V

2. 250µs Pulse Test

V

GS, Gate-Source Voltage [V]

0

5

10

15

20

25

30

35

0.5

1.0

1.5

V

GS = 20V

V

GS = 10V

Note: T

※

J = 25

℃

I

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

10

1

150℃

Notes :

※

1. V

GS = 0V

2. 250µs Pulse Test

25℃

V

SD, Source-Drain voltage [V]

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

3500

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Notes ;

※

1. V

GS = 0 V

2. f =1MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0

10

20304050

0

2

4

6

8

10

12

V

DS = 300V

V

DS = 120V

V

DS = 480V

Note : I

※

D = 12A

Q

G, Total Gate Charge [nC]

SW

SW12

12N6

N6 5

5

SAMWIN

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SWP12N65 Datasheet(PDF) 3 Page - Xian Semipower Electronic Technology Co., Ltd.

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