SW4N65 datasheet(3/7 Pages) SEMIPOWER

Part #	SW4N65

Description	N-channel MOSFET (TO-251 , TO-252)

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Manufacturer	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Direct Link	http://www.samwinsemi.com

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3 / 7 page

Fig. 1. On-state characteristics

Fig. 2. Transfer characteristics

Fig. 3. On-resistance variation vs.

drain current and gate voltage

Fig. 5. Capacitance characteristics

(Non-Repetitive)

Fig. 6. Gate charge characteristics

Fig. 4. On state current vs.

diode forward voltage

3/7

10

-1

10

0

10

1

10

-2

10

-1

10

0

10

1

،ط Notes :

1. 250¥ىs Pulse Test

2. T

C

= 25،ة

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom :

5.5 V

V

DS

, Drain-Source Voltage [V]

2

3

4

5

6

7

8

9

10

-1

10

0

10

1

150

oC

25

oC

-55

oC

،ط Notes :

1. V

DS

= 50V

2. 250¥ىs Pulse Test

V

GS

, Gate-Source Voltage [V]

0

2

4

6

8

10

12

0

1

2

3

4

5

6

V

GS

= 20V

V

GS

= 10V

،ط Note : T

J

= 25،ة

I

D

, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

-1

10

0

10

1

150،ة

،ط Notes :

1. V

GS

= 0V

2. 250¥ىs Pulse Test

25،ة

V

SD

, Source-Drain voltage [V]

0

5

10

15

20

25

30

35

0

250

500

750

C

iss

=C

gs

+C

gd

(C

ds

=shorted)

C

oss

=C

ds

+C

gd

C

rss

=C

gd

،ط Notes :

1. V

GS

= 0V

2. f=1MHz

C

iss

C

oss

C

rss

V

DS

, Drain-Source Voltage [V]

0

4

8

12

16

20

0

2

4

6

8

10

12

V

DS

= 325V

V

DS

= 520V

*. Note : I

D

= 4.0A

Q

G

, Total Gate Charge [nC]

SW4N65

SAMWIN

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