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2SB1490 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1490 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1490 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -140 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -6mA B -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -6mA B -3.0 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -100 μA ICEO Collector Cutoff Current VCE= -140V; IB= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μA hFE-1 DC Current Gain IC= -1A; VCE= -5V 2000 hFE-2 DC Current Gain IC= -6A; VCE= -5V 5000 30000 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V 20 MHz Switching Times ton Turn-on Time 1.0 μs tstg Storage Time 1.5 μs tf Fall Time IC= -6A; IB1= -IB2= -6mA, VCC= -50V 1.2 μs hFE-2 Classifications Q P 5000-15000 8000-30000 isc Website:www.iscsemi.cn 2 |
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