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2SB1551 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SB1551 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1551 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V; IC= -5A) APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse -20 A Collector Power Dissipation @Ta=25℃ 2 PC Collector Power Dissipation @TC=25℃ 30 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website:www.iscsemi.cn |
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