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2SC1971 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1971 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1971 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10mA, IE= 0 35 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 17 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA, IC= 0 4 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.5 mA hFE DC Current Gain IC= 0.1A; VCE= 10V 10 180 PO Output Power 6 7 W ηC Collector Efficiency VCC= 13.5V; Pin= 0.6W; f= 175MHz 60 70 % hFE Classifications X A B C D 10-25 20-45 35-70 55-110 90-180 isc Website:www.iscsemi.cn |
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