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LQA20T300C Datasheet(PDF) 1 Page - Power Integrations, Inc. |
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LQA20T300C Datasheet(HTML) 1 Page - Power Integrations, Inc. |
1 / 8 page LQA20T300C, LQA20B300C Qspeed™ Family 300 V, 20 A Q-Series Common-Cathode Diode www.powerint.com January 2011 Product Summary IF(AVG) per diode 10 A VRRM 300 V QRR (Typ at 125 °C) 38 nC IRRM (Typ at 125 °C) 2.3 A Softness tb/ta (Typ at 125 °C) 0.7 TO-220AB TO-263AB LQA20T300C LQA20B300C RoHS Compliant Package uses Lead-free plating and Green mold compound.Halogen free per IEC 61249-2-21. General Description This device has the lowest QRR of any 300 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications • AC/DC and DC/DC output rectification • Output & freewheeling diodes • Motor drive circuits • DC-AC inverters Features • Low Q RR, Low IRRM, Low tRR • High dI F/dt capable (1000A/µs) • Soft recovery Benefits • Increases efficiency • Eliminates need for snubber circuits • Reduces EMI filter component size & count • Enables extremely fast switching Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter Conditions Rating Units VRRM Peak repetitive reverse voltage 300 V IF(AVG) Average forward current Per Diode, TJ = 150 °C, TC = 115 °C 10 A Per Device, TJ = 150 °C, TC = 115 °C 20 A IFSM Non-repetitive peak surge current 60 Hz, ½ cycle 80 A IFSM Non-repetitive peak surge current ½ cycle of t = 28 µs Sinusoid, TC = 25 °C 350 A TJ Maximum junction temperature 150 °C TSTG Storage temperature –55 to 150 °C Lead soldering temperature Leads at 1.6mm from case, 10 sec 300 °C PD Power dissipation TC = 25 °C 52 W Thermal Resistance Symbol Resistance from: Conditions Rating Units RθJA Junction to ambient TO-220AB (only) 62 °C/W Per Diode 2.4 °C/W RθJC Junction to case Per Device 1.2 °C/W Pin Assignment A1 K A2 A1 K A2 |
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