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BPW20RF Datasheet(PDF) 2 Page - Vishay Siliconix |
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BPW20RF Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page BPW20RF www.vishay.com Vishay Semiconductors Rev. 1.7, 11-Aug-11 2 Document Number: 81570 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 50 mA VF 1.0 1.3 V Breakdown voltage IR = 20 μA, E = 0 V(BR) 10 V Reverse dark current VR = 5 V, E = 0 Iro 230 nA Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD 1.2 nF VR = 5 V, f = 1 MHz, E = 0 CD 400 pF Dark resistance VR = 10 mV RD 38 G Open circuit voltage EA = 1 klx Vo 330 500 mV Temperature coefficient of Vo EA = 1 klx TKVo - 2 mV/K Short circuit current EA = 1 klx Ik 20 60 μA Temperature coefficient of Ik EA = 1 klx TKIk 0.1 %/K Reverse light current EA = 1 klx, VR = 5 V Ira 20 60 μA Ee = 1 mW/cm2, = 950 nm, VR = 5 V Ira 42 μA Angle of half sensitivity ± 50 deg Wavelength of peak sensitivity p 920 nm Range of spectral bandwidth 0.1 400 1100 nm Rise time VR = 0 V, RL = 1 k, = 820 nm tr 3.4 μs Fall time VR = 0 V, RL = 1 k, = 820 nm tf 3.7 μs 40 60 80 120 100 20 94 8468 10 101 102 103 104 VR =5V Tamb - Ambient Temperature (°C) 0.8 0.9 1.0 1.1 1.3 1.2 94 8469 VR =5V λ = 950 nm Tamb - Ambient Temperature (°C) 40 60 80 120 100 20 0 |
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