BPW20RF datasheet(2/5 Pages) VISHAY

Part #	BPW20RF

Description	Silicon Photodiode, RoHS Compliant

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Manufacturer	VISHAY [Vishay Siliconix]

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BPW20RF

www.vishay.com

Vishay Semiconductors

Rev. 1.7, 11-Aug-11

2

Document Number: 81570

For technical questions, contact: detectortechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Reverse Dark Current vs. Ambient Temperature

Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 50 mA

VF

1.0

1.3

V

Breakdown voltage

IR = 20 μA, E = 0

V(BR)

10

V

Reverse dark current

VR = 5 V, E = 0

Iro

230

nA

Diode capacitance

VR = 0 V, f = 1 MHz, E = 0

CD

1.2

nF

VR = 5 V, f = 1 MHz, E = 0

CD

400

pF

Dark resistance

VR = 10 mV

RD

38

G



Open circuit voltage

EA = 1 klx

Vo

330

500

mV

Temperature coefficient of Vo

EA = 1 klx

TKVo

- 2

mV/K

Short circuit current

EA = 1 klx

Ik

20

60

μA

Temperature coefficient of Ik

EA = 1 klx

TKIk

0.1

%/K

Reverse light current

EA = 1 klx, VR = 5 V

Ira

20

60

μA

Ee = 1 mW/cm2,  = 950 nm,

VR = 5 V

Ira

42

μA

Angle of half sensitivity



± 50

deg

Wavelength of peak sensitivity



p

920

nm

Range of spectral bandwidth



0.1

400

1100

nm

Rise time

VR = 0 V, RL = 1 k,  = 820 nm

tr

3.4

μs

Fall time

VR = 0 V, RL = 1 k,  = 820 nm

tf

3.7

μs

40

60

80

120

100

20

94 8468

10

101

102

103

104

VR =5V

Tamb - Ambient Temperature (°C)

0.8

0.9

1.0

1.1

1.3

1.2

94 8469

VR =5V

λ = 950 nm

Tamb - Ambient Temperature (°C)

40

60

80

120

100

20

0

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