BYM36A, BYM36B, BYM36C, BYM36D, BYM36E

Fast Avalanche Sinterglass Diode

Vishay Semiconductors

Document Number: 86012

For technical questions within your region, please contact one of the following:

www.vishay.com

Rev. 1.7, 25-Aug-10

109

Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature

Fig. 2 - Max. Average Forward Current vs. Ambient Temperature

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

BYM36A

--

1.6

V

BYM36B

--

1.6

V

BYM36C

--

1.6

V

BYM36D

-

-

1.78

V

BYM36E

-

-

1.78

V

BYM36A

-

-

1.22

V

BYM36B

-

-

1.22

V

BYM36C

-

-

1.22

V

BYM36D

-

-

1.28

V

BYM36E

-

-

1.28

V

Reverse current

--

5

μA

-

-

100

μA

Reverse recovery time

BYM36A

-

-

100

ns

BYM36B

-

-

100

ns

BYM36C

-

-

100

ns

BYM36D

-

-

150

ns

BYM36E

-

-

150

ns

Reverse breakdown voltage

BYM36A

300

-

-

V

BYM36B

500

-

-

V

BYM36C

700

-

-

V

BYM36D

900

-

-

V

BYM36E

1100

-

-

V

0

100

500

200

300

400

600

0

40

80

120

160

200

959705

R

1000 V

800 V

600 V

400 V

200 V

R

959706

0

40

80

120

160

200

4

3

2

1

0

V

half sinewave

R

R

BYM36A, BYM36B, BYM36C