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2SC3659 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3659 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3659 DESCRIPTION ·High Breakdown Voltage- : VCES= 1700V (Min) ·Built-in Damper Didoe APPLICATIONS ·Designed for high voltage, high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc Website：www.iscsemi.cn |
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