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QH03TZ600 Datasheet(PDF) 1 Page - Power Integrations, Inc. |
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QH03TZ600 Datasheet(HTML) 1 Page - Power Integrations, Inc. |
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1 / 7 page  QH03TZ600 Qspeed ™ Family 600 V, 3 A H-Series PFC Diode www.powerint.com January 2011 Product Summary IF(AVG) 3 A VRRM 600 V QRR (Typ at 125 °C) 14.8 nC IRRM (Typ at 125 °C) 1.35 A Softness tb/ta (Typ at 125 °C) 1.1 AC TO-220AC RoHS Compliant Package uses Lead-free plating and Green mold compound. Halogen free per IEC 61249-2-21. General Description This device has the lowest QRR of any 600V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications • Power Factor Correction (PFC) Boost Diode • Motor drive circuits • DC-AC Inverters Features • Low Q RR, Low IRRM, Low tRR • High dI F/dt capable (1000A/µs) • Soft recovery Benefits • Increases efficiency • Eliminates need for snubber circuits • Reduces EMI filter component size & count • Enables extremely fast switching Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter Conditions Rating Units VRRM Peak repetitive reverse voltage 600 V IF(AVG) Average forward current TJ = 150 °C, TC = 120°C 3 A IFSM Non-repetitive peak surge current 60 Hz, ½ cycle 35 A IFSM Non-repetitive peak surge current ½ cycle of t=28 µs Sinusoid, TC=25 °C 350 A TJ(MAX) Maximum junction temperature 150 °C TSTG Storage temperature –55 to 150 °C Lead soldering temperature Leads at 1.6 mm from case, 10 sec 300 °C VISOL Isolation voltage (leads-to-tab) AC 2500 V PD Power dissipation TC = 25 °C 30.4 W Thermal Resistance Symbol Resistance from: Conditions Rating Units RθJA Junction to ambient TO-220 62 °C/W RθJC Junction to case TO-220 4.1 °C/W Pin Assignment NC C A |
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