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2SC3833 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3833 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3833 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 1.3 V ICBO Collector Cutoff Current VCB= 500V ; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 0.1 mA hFE DC Current Gain IC= 7A ; VCE= 4V 10 30 COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1.0MHz 105 pF fT Current-Gain—Bandwidth Product IE= -1A ; VCE= 12V 10 MHz Switching Times ton Turn-on Time 1.0 μs tstg Storage Time 3.0 μs tf Fall Time IC= 7A,IB1= 0.7A; IB2= -1.4A RL= 28.5Ω; VCC= 200V 0.5 μs isc Website：www.iscsemi.cn 2 |
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