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DG309BDQ-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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DG309BDQ-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 15 page www.vishay.com 4 Document Number: 70047 S11-0303-Rev. G, 28-Feb-11 Vishay Siliconix DG308B, DG309B Notes: a. Refer to PROCESS OPTION FLOWCHART . b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONSa (for Single Supply) Parameter Symbol Test Conditions Unless Specified V+ = 12 V, V- = 0 V VIN = 11 V, 3.5 V f Temp.b Typ.c A Suffix - 55 °C to 125 °C D Suffix - 40 °C to 85 °C Unit Min.d Max.d Min.d Max.d Analog Switch Analog Signal Rangee VANALOG Full 0 12 0 12 V Drain-Source On-Resistance RDS(on) VD = 3 V, 8 V, IS = 1 mA Room Full 90 160 200 160 200 Dynamic Characteristics Turn-On Time tON VS = 8 V, see figure 2 Room 300 300 ns Turn-Off Time tOFF Room 200 200 Charge Injection Q CL = 1 nF, Vgen = 6 V, Rgen = 0 Room 4 pC Power Supply Positive Supply Current I+ VIN = 0 V or 12 V Room Full 1 5 1 5 µA Negative Supply Current I- Room Full - 1 - 5 - 1 - 5 Power Supply Range for Continuous Operation VOP Full 4 44 4 44 V |
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