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DG417DY-E3 Datasheet(PDF) 10 Page - Vishay Siliconix |
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DG417DY-E3 Datasheet(HTML) 10 Page - Vishay Siliconix |
10 / 16 page www.vishay.com 10 Document Number: 70051 S10-1528-Rev. G, 19-Jul-10 Vishay Siliconix DG417, DG418, DG419 APPLICATIONS Micropower UPS Transfer Switch When VCC drops to 3.3 V, the DG417 changes states, closing SW1 and connecting the backup cell, as shown in Figure 10. D1 prevents current from leaking back towards the rest of the circuit. Current consumption by the CMOS analog switch is around 100 pA; this ensures that most of the power available is applied to the memory, where it is really needed. In the stand-by mode, hundreds of A are sufficient to retain memory data. When the 5 V supply comes back up, the resistor divider senses the presence of at least 3.5 V, and causes a new change of state in the analog switch, restoring normal operation. Programmable Gain Amplifier The DG419, as shown in figure 11, allows accurate gain selection in a small package. Switching into virtual ground reduces distortion caused by RDS(on) variation as a function of analog signal amplitude. GaAs FET Driver The DG419, as shown in figure 12 may be used as a GaAs FET driver. It translates a TTL control signal into - 8 V, 0 V level outputs to drive the gate. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70051. Figure 11. Micropower UPS Circuit GND IN D V- 3 V Li Cell Memory DG417 (5 V) V+ S + – SW1 VL VSENSE R1 453 k D1 VCC R2 383 k Figure 12. Programmable Gain Amplifier DG419 + - IN R1 R2 VIN VOUT D S1 S2 Figure 13. GaAs FET Driver DG419 5 V VOUT D V- GND S2 S1 VL V+ + 5 V - 8 V GaAs FET |
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