DG442LDQ-T1-E3 datasheet(5/14 Pages) VISHAY

Part #	DG442LDQ-T1-E3

Description	Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 71399

S11-1066–Rev. E, 30-May-11

www.vishay.com

5

Vishay Siliconix

DG441L, DG442L

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Refer to PROCESS OPTION FLOWCHART.

b. Room = 25 °C, Full = as determined by the operating temperature suffix.

c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.

e. Guaranteed by design, not subject to production test.

f. VIN = input voltage to perform proper function.

g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONSa (Single Supply 3 V)

Test Conditions

Unless Otherwise Specified

V + = 3 V, V - = 0 V

VIN = 0.4 V

f

A Suffix Limits

- 55 °C to 125 °C

D Suffix Limits

- 40 °C to 85 °C

Unit

Parameter

Symbol

Temp.b

Typ.c

Min.d

Max.d

Min.d

Max.d

Analog Switch

Analog Signal Rangee

VANALOG

Full

0303

V

Drain-Source

On-Resistance

RDS(on)

V + = 2.7 V, V - = 0 V

IS = 5 mA, VD = 0.5, 2.2 V

Room

Full

65

80

115

80

100



On-Resistance Match

Between Channelse

RDS(on)

IS = 5 mA, VD = 2.2 V

Room

1

3

Switch Off

Leakage Currentg

IS(off)

V + = 3.3 , V - = 0 V

VD = 1, 2 V, VS = 2, 1 V

Room

Full

- 1

- 15

1

15

- 1

- 10

1

10

nA

ID(off)

Room

Full

- 1

- 15

1

15

- 1

- 10

1

10

Channel On

Leakage Currentg

ID(on)

V + = 3.3 V, V - = 0 V

VS = VD = 1, 2 V

Room

Full

- 1

- 15

1

15

- 1

- 10

1

10

Digital Control

Input Current, VIN Low

e

IIL

VIN under test = 0.4 V

Full

0.005

- 1.5

1.5

- 1

1

µA

Input Current, VIN High

e

IIH

VIN under test = 2.4 V

Full

0.005

- 1.5

1.5

- 1

1

Dynamic Characteristics

Turn-On Time

tON

RL = 300 , CL = 35 pF

VS = 1.5 V, see figure 2

Room

Full

50

136

175

136

151

ns

Turn-Off Time

tOFF

Room

Full

30

100

140

100

125

Charge Injectione

Q

Vg = 0 V, Rg = 0 , CL = 10 nF

Room

1

pC

Off Isolatione

OIRR

RL = 50 , CL = 5 pF , f = 1 MHz

Room

68

dB

Channel-to-Channel

Crosstalke

XTALK

Room

85

Source Off Capacitancee

CS(off)

f = 1 MHz

Room

6

pF

Drain Off Capacitancee

CD(off)

Room

6

Channel On Capacitancee

CD(on)

Room

20

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