DG429DW-E3 datasheet(5/14 Pages) VISHAY

Part #	DG429DW-E3

Description	Single 8-Ch/Differential 4-Ch Latchable Analog Multiplexers

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 70063

S11-1350–Rev. K, 04-Jul-11

www.vishay.com

5

Vishay Siliconix

DG428, DG429

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Refer to PROCESS OPTION FLOWCHART.

b. Room = 25 °C, full = as determined by the operating temperature suffix.

c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

e. Guaranteed by design, not subject to production test.

f. VIN = input voltage to perform proper function.

g.

R

DS(on) = RDS(on) MAX – RDS(on) MIN

(

RDS(on) AVE

)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONSa (for single supply)

Parameter

Symbol

Test Conditions

Unless Otherwise Specified

V+ = 12 V, V- = 0 V, WR = 0,

RS = 2.4 V, VIN = 2.4 V, 0.8 V

f

Temp.b

Typ.c

A Suffix

- 55°C to 125 °C

D Suffix

- 40 °C to 85 °C

Unit

Min.d

Max.d

Min.d

Max.d

Analog Switch

Analog Signal Rangee

VANALOG

Full

0

12

0

12

V

Drain-Source

On-Resistance

RDS(on)

VD = ± 10 V, VAL = 0.8 V

IS = - 500 µA, VAH = 2.4 V

Room

80

150



RDS(on) Match

g

R

DS(on)

0 V < VS < 10 V

IS = - 1 mA

Room

5

%

Source Off Leakage Current

IS(off)

VS = 0 V, 10 V,

VEN = 0 V, VD = 10 V, 0 V

Room

Full

± 0.03

- 0.5

- 50

0.5

50

- 0.5

- 50

0.5

50

nA

Drain Off Leakage Current

ID(off)

VD = 0 V, 10 V

VS = 10 V, 0 V

VEN = 0 V

DG428

Room

Full

± 0.07

- 1

- 100

1

100

- 1

- 100

1

100

DG429

Room

Full

± 0.05

- 1

- 50

1

50

- 1

- 50

1

50

Drain On Leakage Current

ID(on)

VS = VD = 0 V, 10 V

VEN = 2.4 V

VAL= 0.8 V

VAH = 2.4 V

DG428

Room

Full

± 0.07

- 1

- 100

1

100

- 1

- 100

1

100

DG429

Room

Full

± 0.05

- 1

- 50

1

50

- 1

- 50

1

50

Digital Control

Logic Input Current

Input Voltage High

IAH

VA = 2.4 V

Full

1

µA

VA = 12 V

Full

1

Logic Input Current

Input Voltage Low

IAL

VEN = 0 V, 2.4 V, VA = 0 V

RS = 0 V, WR = 0 V

Full

- 1

Dynamic Characteristics

Transition Time

tTRANS

S1 = 10 V/ 2 V, S8 = 2 V/ 10 V

See Figure 5

Room

Full

160

280

350

280

350

ns

Break-Before-Make Interval

tOPEN

See Figure 4

Room

Full

40

25

10

25

10

Enable and WriteTurn-On Time

tON(EN,WR)

S1 = 5 V

See Figure 6 and 7

Room

Full

110

300

400

300

400

Enable and Reset Turn-Off Time

tOFF(EN,RS)

S1 = 5 V

See Figure 6 and 8

Room

Full

70

300

400

300

400

Charge Injection

Q

VGEN = 6 V, RGEN = 0 

CL = 1 nF, See Figure 9

Room

4

pC

Off Isolation

OIRR

VEN = 0 V, RL = 300 

CL = 15 pF, VS = 7 VRMS

f = 100 kHz

Room

- 75

dB

Minimum Input Timing Requirements

Write Pulse Width

tW

See Figure 2

Full

100

ns

AX, EN Data Set Up time

tS

Full

100

AX, EN Data Hold Time

tH

Full

10

Reset Pulse Width

tRS

VS = 5 V, See Figure 3

Full

100

Power Supplies

Positive Supply Current

I+

VEN = 0 V, VA = 0, RS = 5 V

Room

20

100

µA

x 100 %

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