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DG442BDN-T1-E4 Datasheet(PDF) 4 Page - Vishay Siliconix |
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DG442BDN-T1-E4 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 15 page www.vishay.com 4 Document Number: 72625 S11-1350-Rev. B, 04-Jul-11 Vishay Siliconix DG441B, DG442B This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SCHEMATIC DIAGRAM (typical channel) SPECIFICATIONS (for single supply) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V VIN = 2.4 V, 0.8 V e Temp.b Limits - 40 °C to 85 °C Unit Min.d Typ.c Max.d Analog Switch Analog Signal Rangee VANALOG Full 0 12 V Drain-Source On-Resistance RDS(on) IS = 1 mA, VD = 3 V, 8 V Room Full 90 160 200 Dynamic Characteristics Turn-On Time tON RL = 1 k, CL = 35 pF, VS = 8 V See Figure 2 Room 120 300 ns Turn-Off Time tOFF Room 60 200 Charge Injection Q CL = 1 nF, Vgen = 6 V, Rgen = 0 Room 4 pC Power Supplies Positive Supply Current I+ VIN = 0 V or 5 V Room Full 1 5 µA Negative Supply Current I- Room Full - 1 - 5 Figure 1. INX 5 V Reg Level Shift/ Drive V+ GND V- V- V+ |
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