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Document Number: 72625

S11-1350-Rev. B, 04-Jul-11

Vishay Siliconix

DG441B, DG442B

This document is subject to change without notice.

Notes:

a. Refer to PROCESS OPTION FLOWCHART.

b. Room = 25 °C, Full = as determined by the operating temperature suffix.

c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

e. Guaranteed by design, not subject to production test.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SCHEMATIC DIAGRAM (typical channel)

SPECIFICATIONS (for single supply)

Parameter

Symbol

Test Conditions

Unless Otherwise Specified

V+ = 12 V, V- = 0 V

e

Limits

- 40 °C to 85 °C

Unit

Analog Switch

Full

0

12

V

Drain-Source

On-Resistance

Room

Full

90

160

200



Dynamic Characteristics

Turn-On Time

See Figure 2

Room

120

300

ns

Turn-Off Time

Room

60

200

Charge Injection

Q

Room

4

pC

Power Supplies

Positive Supply Current

I+

Room

Full

1

5

µA

Negative Supply Current

I-

Room

Full

- 1

- 5

Figure 1.

5 V Reg

Level

Shift/

Drive

V+

GND

V-

V-

V+