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DG445BDY-E3 Datasheet(PDF) 5 Page - Vishay Siliconix |
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DG445BDY-E3 Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 15 page Document Number: 72626 S11-1350-Rev. B, 04-Jul-11 www.vishay.com 5 Vishay Siliconix DG444B, DG445B This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) RDS(on) vs. VD and Single Power Supply Voltages Leakage Current vs. Temperature 02468 10 12 14 16 0 25 50 75 100 125 150 175 200 225 VD – Drain Voltage (V) V+ = 5 V 7 V 10 V 12 V 15 V 250 - 55 25 45 5 - 15 65 1 nA 100 pA 10 pA - 35 1 pA 85 105 125 V+ = 15 V V- = - 15 V VS, VD = - 14 V IS(off), ID(off) Temperature (°C) Leakage Currents vs. Analog Voltage QS, QD - Charge Injection vs. Analog Voltage - 20 - 15 - 10 - 5 0 40 20 0 - 20 - 40 IS(off), ID(off) ID(on) VANALOG – Analog Voltage (V) V+ = 22 V V- = - 22 V TA = 25 °C 30 10 - 10 - 30 5 101520 - 15 - 10 - 5 0 5 10 15 30 20 10 0 - 10 - 20 - 30 V+ = 15 V V- = - 15 V V+ = 12 V V- = 0 V VANALOG – Analog Voltage (V) Off Isolation vs. Frequency 10 k 100 k 1 M 10 M 40 50 60 70 80 90 100 110 120 f – Frequency (Hz) V+ = + 15 V V- = - 15 V RL = 50 Ω |
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