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2SC4580 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4580 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4580 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V ICBO Collector Cutoff Current At rated Voltage 100 μA ICEO Collector Cutoff Current At rated Voltage 100 μA IEBO Emitter Cutoff Current At rated Voltage 100 μA hFE-1 DC Current Gain IC= 4A; VCE= 5V 10 hFE-2 DC Current Gain IC= 1mA; VCE= 5V 5 fT Current-Gain—Bandwidth Product IC= 0.8A; VCE= 10V 20 MHz Switching times ton Turn-on Time 0.5 μs tstg Storage Time 2.0 μs tf Fall Time IC= 4A, IB1= 0.8A; IB2= -1.6A RL= 37.5Ω; VBB2= 4V 0.2 μs isc Website：www.iscsemi.cn 2 |
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