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2SC5150 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC5150 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5150 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display, color TV ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICP Collector Current-Pulse 20 A IB B Base Current- Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn |
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