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2SC5386 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5386 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC5386 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 600 V VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A 3.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.5A 1.5 V ICBO Collector cut-off current VCB=1500V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1A ; VCE=5V 15 35 hFE-2 DC current gain IC=6A ; VCE=5V 4.3 7.5 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 105 pF fT Transition frequency IE=0.1A ; VCE=10V 1.7 MHz Switching times ts Storage time 2.5 3.5 μs tf Fall time ICP=5A;IB1(end)=1.0A fH =64kHz 0.15 0.3 μs |
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