DG636EQ-T1-E3 datasheet(8/13 Pages) VISHAY

Part #	DG636EQ-T1-E3

Description	0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 69901

S10-1815-Rev. D, 02-Aug-10

Vishay Siliconix

DG636

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Leakage Current vs. Temperature

Insertion Loss, Off-Isolation, Crosstalk

vs. Frequency

Total Harmonic Distortion vs. Frequency

Temperature (°C)

1

10

100

1000

10 000

100 000

- 60 - 40 - 20

0

20

40

60

80

100

120

140

ID(off)

ID(on)

IS(off)

V+ = + 5.0 V

V- = - 5.0 V

Frequency (Hz)

100K

1M

10M

100M

1G

- 100

- 90

- 80

- 70

- 60

- 50

- 40

- 30

- 20

- 10

0

10

OIRR

LOSS

XTALK

V+ = ± 5.0 V

RL = 50 

Frequency (Hz)

0.001

0.01

0.1

1

10

100

10

100

1000

10 000

100 000

RL = 600 

VSignal = 1 VRMS

V+ = 3.0 V

V+ = 5.0 V

V± = ± 5.0 V

Leakage Current vs. Temperature

Charge Injection vs. Analog Voltage

Switching Threshold vs. Supply Voltage

Temperature (°C)

1

10

100

1000

10 000

- 60 - 40 - 20

0

20

40

60

80

100

120

140

V+ = 13.2 V

V- = 0 V

ID(off)

ID(on)

IS(off)

VS - Analog Voltage (V)

- 1.2

- 1

- 0.8

- 0.6

- 0.4

- 0.2

0

0.2

0.4

0.6

0.8

1.0

1.2

- 6 - 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

V+ = + 5.0 V

V- = - 5.0 V

V+ = + 5.0 V

V- = 0 V

V+ = + 3.0 V

V- = 0 V

V+ = + 13.2 V

V- = 0 V

V+ = + 12 V

V- = 0 V

V+ - Supply Voltage (V)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

02

46

8

10

12

14

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DG636EQ-T1-E3 Datasheet(PDF) 8 Page - Vishay Siliconix

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