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2SD675 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD675 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD675 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A B 2.5 V VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 0.1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 60 200 hFE-2 DC Current Gain IC= 6A; VCE= 5V 20 hFE-1 Classifications B C 60-120 100-200 isc Website:www.iscsemi.cn |
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