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2SD953 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD953 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD953 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500m A;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2 A 5.0 V VBEsat Base-emitter saturation voltage IC=4.5 A;IB=2 A 1.5 V VCB=750V;IE=0 0.1 ICBO Collector cut-off current VCB=1500V;IE=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=4A ; VCE=10V 3 VF Diode forward voltage IF=5A 1.6 V tf Fall time 0.8 μs ts Storage time IC=4A;IBend=2A;LB=10μH 13.5 μs |
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