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2SD1196 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1196 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1196 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=5mA ; IE=0 110 V V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞ 100 V VCEsat Collector-emitter saturation voltage IC=4A, IB=8mA 0.9 1.5 V VBEsat Base-emitter saturation voltage IC=4A, IB=8mA 2.0 V ICBO Collector cut-offcurrent VCB=80V;IE=0 0.1 mA IEBO Emitter cut-offcurrent VEB=5V;IC=0 3.0 mA hFE DC current gain IC=4A ; VCE=3V 1500 4000 fT Transition frequency IC=4A ; VCE=5V 20 MHz Switching times ton Turn-on time 0.6 μ s tstg Storage time 4.8 μ s tf Fall time IC=500IB1=-500IB2=4A VCC=50V;RL=12.5Ω; 1.6 μ s |
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