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LC74772V Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LC74772V Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 17 page  No. 5159-2/17 LC74772V Parameter Symbol Conditions Ratings Unit min typ max Supply voltage VDD VDD 2.7 5.0 5.5 V Input high-level voltage VIH CTRL1, TESTIN, CS, SCLK, SIN, OUTMOD, HSYNC, 0.8 VDD VDD + 0.3 V VSYNC, RST Input low-level voltage VIL CTRL1, TESTIN, CS, SCLK, SIN, OUTMOD, HSYNC, VSS – 0.3 0.2 VDD V VSYNC, RST Oscillator frequency FOSC OSCIN, OSCOUT (LC oscillator) 6 (8) 10 MHz Allowable Operating Ranges at Ta = –30 to +70°C Parameter Symbol Conditions Ratings Unit min typ max CKOUT, CHA4, BLK4, CHA3, BLK3, B, G, R, BLANK: Output high-level voltage VOH VDD = 5.5 to 4.5 V (VDD = 4.4 to 2.7 V), IOH = –1.0 mA 0.9 VDD V (–0.5 mA) CKOUT, CHA4, BLK4, CHA3, BLK3, B, G, R, BLANK: Output low-level voltage VOL VDD = 5.5 to 4.5 V (VDD = 4.4 to 2.7 V), IOL = 1.0 mA 0.1 VDD V (0.5 mA) IIH CTRL1, TESTIN, CS, SCLK, SIN, OUTMOD, HSYNC, 1 µA Input current VSYNC: VIN = VDD IIL CTRL1, TESTIN, HSYNC, VSYNC: VIN = VSS –1 µA Operating current drain IDD VDD pin; all outputs open, LC oscillator: 8 MHz 10 mA Electrical Characteristics at Ta = –30 to +70°C, unless otherwise specified VDD = 5 V Parameter Symbol Conditions Ratings Unit min typ max Minimum input pulse width tW (SCLK) SCLK 200 ns tW (CS) CS (the period that CS is high) 1 µs Data setup time tSU (CS) CS 200 ns tSU (SIN) SIN 200 ns Data hold time th (CS) CS 2 µs th (SIN) SIN 200 ns One-word write time tword The time to write 8 bits of data 4.2 µs twt The RAM data write time 1 µs Timing Characteristics at Ta = –30 to +70°C, VDD = 5 ± 0.5 V |
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